| 发明名称 |
METHODS AND SYSTEMS FOR CHEMICAL MECHANICAL POLISH AND CLEAN |
| 摘要 |
The present disclosure provides a method of fabricating a semiconductor device. The method includes providing a semiconductor structure including a metal gate (MG) layer formed to fill in a trench between two adjacent interlayer dielectric (ILD) regions; performing a chemical mechanical polishing (CMP) process using a CMP system to planarize the MG layer and the ILD regions; and cleaning the planarized MG layer using a O3/DIW solution including ozone gas (O3) dissolved in deionized water (DIW). The MG layer is formed on the ILD regions. |
| 申请公布号 |
US2015179432(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201314134914 |
申请日期 |
2013.12.19 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Suen Shich-Chang;Liu Chi-Jen;Chuang Ying-Liang;Wu Li-Chieh;Chen Liang-Guang;Yen Ming-Liang |
| 分类号 |
H01L21/02;H01L21/306 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a semiconductor device, the method comprising:
providing a semiconductor structure including a metal gate (MG) layer formed to fill in a trench between two adjacent interlayer dielectric (ILD) regions, the MG layer being formed on the ILD regions; performing a chemical mechanical polishing (CMP) process using a CMP system to planarize the MG layer and the ILD regions; and cleaning the planarized MG layer using a O3/DIW solution including ozone gas (O3) dissolved in deionized water (DIW). |
| 地址 |
Hsin-Chu TW |
