Light-Emitting Device with Reflecting Electrode

摘要

An electrode structure for effectively improving the stability of a semiconductor LED includes a reflecting layer capable of current spreading. In such an electrode structure, the current injects from the side surface of the reflecting layer to form a certain potential gradient over the contact surface between the electrode and the LED contact surface, thereby inhibiting the metal ion of the reflecting layer from migration due to electric field during usage, thereby improving device stability. In addition, the electrode portion for current injection can include a high-reflectivity material yet not vulnerable to ion migration, thereby increasing the entire reflecting area and improving luminous efficiency.

主权项

1. A light-emitting device, comprising:
a semiconductor structure with a plurality of semiconductor layers, including a light-emitting layer disposed between two of the plurality of semiconductor layers; at least one electrode with a reflecting layer, wherein the electrode has a contact surface with at least one semiconductor layer of the semiconductor structure; wherein if a forward bias is applied to the light-emitting device, a corresponding current flows to the reflecting layer from its side, generating a potential gradient at the contact surface, thereby suppressing electromigration of a metal in the electrode.