SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

摘要

Provided is a semiconductor device including a deep doped region of a first conductivity type, a well region of a second conductivity type, a base region of the first conductivity type, an insulated gate bipolar transistor (IGBT) and a metal oxide semiconductor (MOS). The well region is disposed in the deep doped region. The base region is disposed in the well region and is not connected to the deep doped region. The IGBT is disposed on the well region at the first side of the base region, and includes a first doped region of the second conductivity type disposed in the base region. The MOS is disposed on the well region and the deep well region at the second side of the base region, and includes a second doped region of the second conductivity type disposed in the base region.

主权项

1. A semiconductor device, comprising:
a deep doped region of a first conductivity type, comprising a first buried layer and two high-voltage doped regions and disposed in a substrate; a first well region of a second conductivity type, disposed in the deep doped region; a base region of the first conductivity type, disposed in the first well region and not connected to the deep doped region; an insulated gate bipolar transistor (IGBT), disposed on the first well region at a first side of the base region, and comprising a first doped region of the second conductivity type disposed in the base region; and a metal oxide semiconductor (MOS), disposed on the first well region and the deep well region at a second side of the base region, and comprising a second doped region of the second conductivity type disposed in the base region.