| 发明名称 |
CONFORMAL THIN FILM DEPOSITION OF ELECTROPOSITIVE METAL ALLOY FILMS |
| 摘要 |
The present disclosure relates to a method of forming a semiconductor. The method includes heating a substrate in a reaction chamber, supplying to the reaction chamber a first constituent including a metal borohydride wherein the metal borohydride includes at least one of: an alkaline earth metal, a transition metal, or a combination thereof; supplying to the reaction chamber a main-group hydride constituent; and depositing a metal compound on the substrate, wherein the metal compound comprises a) at least one of an alkaline earth metal a transition metal or a combination thereof, b) boron and c) optionally the main group alloying element. |
| 申请公布号 |
US2015179798(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201314140042 |
申请日期 |
2013.12.24 |
| 申请人 |
CLENDENNING SCOTT B.;ROMERO PATRICIO PATO;DEWEY GILBERT |
发明人 |
CLENDENNING SCOTT B.;ROMERO PATRICIO PATO;DEWEY GILBERT |
| 分类号 |
H01L29/78;H01L29/45;H01L21/28;H01L29/06;H01L29/51;H01L21/324;H01L29/66;H01L29/49 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor, comprising:
heating a substrate in a reaction chamber; supplying to the reaction chamber a first constituent including a metal borohydride, wherein said metal borohydride includes at least one of: an alkaline earth metal, a transition metal or a combination thereof; supplying to the reaction chamber a main-group hydride constituent, wherein the hydride is a compound of hydrogen and a main group alloying element includes one or more elements selected from the following: aluminum, gallium, silicon, germanium, tin, phosphorous, arsenic, antimony and combinations thereof; and depositing a metal compound on the substrate, wherein the metal compound comprises a) the alkaline earth metal, the transition metal or the combination thereof, b) boron and c) optionally the main group alloying element. |
| 地址 |
Portland OR US |
