发明名称 SEMICONDUCTOR DEVICE, LIGHT-EMITTING DEVICE, AND ELECTRONIC DEVICE
摘要 An object is to prevent an operation defect and to reduce an influence of fluctuation in threshold voltage of a field-effect transistor. A field-effect transistor, a switch, and a capacitor are provided. The field-effect transistor includes a first gate and a second gate which overlap with each other with a channel formation region therebetween, and the threshold voltage of the field-effect transistor varies depending on the potential of the second gate. The switch has a function of determining whether electrical connection between one of a source and a drain of the field-effect transistor and the second gate of the field-effect transistor is established. The capacitor has a function of holding a voltage between the second gate of the field-effect transistor and the other of the source and the drain of the field-effect transistor.
申请公布号 US2015179635(A1) 申请公布日期 2015.06.25
申请号 US201514640235 申请日期 2015.03.06
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 MIYAKE Hiroyuki
分类号 H01L27/06 主分类号 H01L27/06
代理机构 代理人
主权项 1. A semiconductor device comprising: a first transistor comprising a first gate and a second gate which overlap with each other with a channel formation region of the first transistor therebetween, wherein the second gate of the first transistor is electrically connected to a potential supply line; a switch, wherein one of terminals of the switch is electrically connected to one of a source and a drain of the first transistor, and the other of the terminals of the switch is electrically connected to the second gate of the first transistor; and a capacitor, wherein one of a pair of electrodes of the capacitor is electrically connected to the second gate of the first transistor, and the other of the pair of electrodes of the capacitor is electrically connected to the other of the source and the drain of the first transistor.
地址 Atsugi-shi JP