| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME |
| 摘要 |
A semiconductor device includes an isolation layer defining an active region formed in a semiconductor substrate. A first recessing process is performed on the isolation layer to expose edge portions of the active region. A first rounding process is performed to round the edge portions of the active region. A second recessing process is performed on the isolation layer. A second rounding process is performed to round the edge portions of the active region. |
| 申请公布号 |
US2015179799(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201514635034 |
申请日期 |
2015.03.02 |
| 申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
KIM JUNG-HWAN;LEAM HUN-HYEOUNG;KIM TAE-HYUN;NAM SEOK-WOO;NAMKOONG HYUN;KIM YONG-SEOK;YU TEA-KWANG |
| 分类号 |
H01L29/78;H01L29/06;H01L29/10 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first portion protruding from a semiconductor substrate; a second portion protruding from the first portion and having a narrower width than a width of the first portion; and an isolation layer covering a semiconductor substrate and a first sidewall of the first portion, wherein the semiconductor substrate, the first portion and the second portion are made of same material. |
| 地址 |
Suwon-si KR |
