发明名称 |
DIAGONAL HARDMASKS FOR IMPROVED OVERLAY IN FABRICATING BACK END OF LINE (BEOL) INTERCONNECTS |
摘要 |
Self-aligned via and plug patterning using diagonal hardmasks for improved overlay in fabricating back end of line (BEOL) interconnects is described. In an example, a method of fabricating an interconnect structure for an integrated circuit involves forming a first hardmask layer above an interlayer dielectric layer disposed above a substrate. The first hardmask layer includes a plurality of first hardmask lines having a first grating in a first direction and comprising one or more sacrificial materials interleaved with the first grating. The method also involves forming a second hardmask layer above the first hardmask layer. The second hardmask layer includes a plurality of second hardmask lines having a second grating in a second direction, diagonal to the first direction. The method also involves, using the second hardmask layer as a mask, etching the first hardmask layer to form a patterned first hardmask layer. |
申请公布号 |
WO2015094502(A1) |
申请公布日期 |
2015.06.25 |
申请号 |
WO2014US64156 |
申请日期 |
2014.11.05 |
申请人 |
INTEL CORPORATION |
发明人 |
MYERS, ALAN M.;SINGH, KANWAL JIT;BRISTOL, ROBERT L.;CHAWLA, JASMEET S. |
分类号 |
H01L21/768;H01L21/31;H01L21/60 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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