ION BEAM ETCHING SYSTEM

摘要

The disclosed embodiments relate to methods and apparatus for removing material from a substrate. In various implementations, conductive material is removed from a sidewall of a previously etched feature such as a trench, hole or pillar on a semiconductor substrate. In practicing the techniques herein, a substrate is provided in a reaction chamber that is divided into an upper plasma generation chamber and a lower processing chamber by a corrugated ion extractor plate with apertures therethrough. The extractor plate is corrugated such that the plasma sheath follows the shape of the extractor plate, such that ions enter the lower processing chamber at an angle relative to the substrate. As such, during processing, ions are able to penetrate into previously etched features and strike the substrate on the sidewalls of such features. Through this mechanism, the material on the sidewalls of the features may be removed.

主权项

1. A method of removing material from sidewalls of features in partially fabricated semiconductor device structures, comprising:
(a) receiving a substrate in a reaction chamber, wherein the reaction chamber is divided into a plasma generation sub-chamber and a processing sub-chamber by an ion extractor plate, wherein at least a portion of the ion extractor plate is corrugated, and wherein the ion extractor plate comprises apertures designed or configured to permit the passage of ions therethrough; (b) flowing a plasma generating gas into and generating a plasma in the plasma generation sub-chamber; and (c) accelerating ions from the plasma generation chamber, through the ion extractor plate, and into the processing volume toward the substrate to thereby remove material from feature sidewalls.