| 发明名称 |
SEMICONDUCTOR MEMORY APPARATUS |
| 摘要 |
A semiconductor memory apparatus may include a program voltage generation block configured to generate a program voltage in response to program codes; a precharge voltage generation block configured to generate a precharge voltage in response to the program codes and addresses; and a main bit line configured to be applied with the program voltage and the precharge voltage. |
| 申请公布号 |
US2015179231(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201414249897 |
申请日期 |
2014.04.10 |
| 申请人 |
SK hynix Inc. |
发明人 |
YOON Jung Hyuk;TAK Jung Mi |
| 分类号 |
G11C5/14;G11C7/12 |
主分类号 |
G11C5/14 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor memory apparatus comprising:
a program voltage generation block configured to generate a program voltage in response to program codes; a precharge voltage generation block configured to generate a precharge voltage in response to the program codes and addresses; and a main bit line configured to be applied with the program voltage and the precharge voltage. |
| 地址 |
Icheon-si Gyeonggi-do KR |
