发明名称 |
THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING THE SAME, ARRAY SUBSTRATE, AND ELECTRONIC APPARATUS |
摘要 |
A thin film transistor and a method for manufacturing the same, an array substrate including the thin film transistor, and an electronic apparatus including the thin film transistor or provided with the array substrate. The thin film transistor includes: a gate electrode, a gate insulating layer, an active layer, and a source electrode and a drain electrode, the active layer is formed of a mixture including a semiconductor nano-material and a photoresist material. The method for manufacturing the thin film transistor includes: preparing a mixture including a semiconductor nano-material and a photoresist material; applying the mixture over a substrate, and forming a patterned active layer by exposure and development. |
申请公布号 |
US2015179672(A1) |
申请公布日期 |
2015.06.25 |
申请号 |
US201314360329 |
申请日期 |
2013.08.07 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
Sun Tuo |
分类号 |
H01L27/12;H01L29/66;H01L21/027;H01L29/786;H01L21/02 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. A thin film transistor, comprising a gate electrode, a gate insulating layer, an active layer, a source electrode and a drain electrode, wherein, the active layer is formed of a mixture including a semiconductor nano-material and a photoresist material. |
地址 |
BEIJING CN |