PROCESS FOR THE MANUFACTURE OF SEMICONDUCTOR DEVICES COMPRISING THE CHEMICAL MECHANICAL POLISHING (CMP) OF III-V MATERIAL IN THE PRESENCE OF A CMP COMPOSITION COMPRISING A SPECIFIC NON-IONIC SURFACTANT

摘要

A process for the manufacture of semiconductor devices comprising the chemical-mechanical polishing of a substrate or layer containing at least one III-V material in the presence of a chemical-mechanical polishing composition (Q1) comprising (A) inorganic particles, organic particles, or a mixture or composite thereof, (B) at least one amphiphilic non-ionic surfactant having (b1) at least one hydrophobic group; and (b2) at least one hydrophilic group selected from the group consisting of polyoxyalkylene groups comprising (b22) oxyalkylene monomer units other than oxyethylene monomer units; and (M) an aqueous medium.

主权项

1. A process for manufacturing semiconductor devices, the process comprising:
chemical-mechanically polishing a substrate or a layer comprising a III-V material in the presence of a chemical-mechanical polishing composition (Q1), which comprises (A) inorganic particles, organic particles, or a mixture or a composite thereof, (B) an amphiphilic non-ionic surfactant comprising
(b1) a hydrophobic group; and(b2) a hydrophilic group, which is a polyoxyalkylene group comprising
(b22) oxyalkylene monomer units other than oxyethylene monomer units; and (M) an aqueous medium.