发明名称 PHOTODETECTOR WITH TAPERED WAVEGUIDE STRUCTURE
摘要 Techniques and mechanisms for providing efficient direction of light to a photodetector with a tapered waveguide structure. In an embodiment, a taper structure of a semiconductor device comprises a substantially single crystalline silicon. A buried oxide underlies and adjoins the monocrystalline silicon of the taper structure, and a polycrystalline Si is disposed under the buried oxide. During operation of the semiconductor device light is redirected in the taper structure and received via a first side of a Germanium photodetector. In another embodiment, one or more mirror structures positioned on a far side of the Germanium photodetector may provide for a portion of the light to be reflected back to the Germanium photodetector.
申请公布号 WO2015094377(A1) 申请公布日期 2015.06.25
申请号 WO2013US77313 申请日期 2013.12.20
申请人 INTEL CORPORATION;VINCENT, BENJAMIN;FESHALI, AVI 发明人 VINCENT, BENJAMIN;FESHALI, AVI
分类号 H01L31/12 主分类号 H01L31/12
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