发明名称 |
PHOTODETECTOR WITH TAPERED WAVEGUIDE STRUCTURE |
摘要 |
Techniques and mechanisms for providing efficient direction of light to a photodetector with a tapered waveguide structure. In an embodiment, a taper structure of a semiconductor device comprises a substantially single crystalline silicon. A buried oxide underlies and adjoins the monocrystalline silicon of the taper structure, and a polycrystalline Si is disposed under the buried oxide. During operation of the semiconductor device light is redirected in the taper structure and received via a first side of a Germanium photodetector. In another embodiment, one or more mirror structures positioned on a far side of the Germanium photodetector may provide for a portion of the light to be reflected back to the Germanium photodetector. |
申请公布号 |
WO2015094377(A1) |
申请公布日期 |
2015.06.25 |
申请号 |
WO2013US77313 |
申请日期 |
2013.12.20 |
申请人 |
INTEL CORPORATION;VINCENT, BENJAMIN;FESHALI, AVI |
发明人 |
VINCENT, BENJAMIN;FESHALI, AVI |
分类号 |
H01L31/12 |
主分类号 |
H01L31/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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