发明名称 PHOTODETECTORS BASED ON WURTZITE MgZnO
摘要 A photodetector (PD) includes a substrate, and a ZnO nucleation layer on the substrate. A wurtzite MgxZn1-xO layer is on the ZnO nucleation layer, wherein x is a mole fraction between 0 and 0.62. A level of crystallinity of the wurtzite MgxZn1-xO layer characterized by x-ray diffraction with a deconvolution of a triple-crystal ω rocking curve of a ZnO (0002) peak has a narrow component with a full width at half maximum (FWHM) less than or equal to (≦) 20 arc/s. First and second spaced apart electrodes are on a surface of the wurtzite MgxZn1-xO layer. The mole fraction x can be between 0.20 and 0.46, including between 0.37 and 0.46, and provide a PD responsivity of at least 20 A/W at 5V in the solar blind region from 200 nm to 290 nm.
申请公布号 US2015179832(A1) 申请公布日期 2015.06.25
申请号 US201414291793 申请日期 2014.05.30
申请人 University of Central Florida Research Foundation, Inc. 发明人 WEI MING;BOUTWELL R. CASEY;SCHOENFELD WINSTON V.
分类号 H01L31/0296;H01L31/0368;H01L31/18 主分类号 H01L31/0296
代理机构 代理人
主权项 1. A photodetector (PD), comprising: a substrate; a ZnO nucleation layer on said substrate; a wurtzite MgxZn1-xO layer epitaxial to and on said ZnO nucleation layer, wherein x is a mole fraction between 0 and 0.62, wherein a level of crystallinity of said wurtzite MgxZn1-xO layer characterized by x-ray diffraction with a deconvolution of a triple-crystal ω rocking curve of a ZnO (0002) peak has a narrow component with a full width at half maximum (FWHM) less than or equal to (≦) 20 arc/s, and first and second spaced apart electrodes on said wurtzite MgxZn1-xO layer.
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