| 发明名称 |
SEMICONDUCTOR DEVICES AND METHODS OF MANUFACTURING THE SAME |
| 摘要 |
A semiconductor device includes a through electrode penetrating a substrate such that a first end portion of the through electrode protrudes from a first surface of the substrate, a passivation layer covering the first surface of the substrate and a sidewall of the first end portion of the through electrode, a bump having a lower portion penetrating the passivation layer and coupled to the first end portion of the through electrode, and a lower metal layer disposed between the bump and the first end portion of the through electrode. The lower metal layer extends onto a sidewall of the bump and has a concave shape. |
| 申请公布号 |
US2015179545(A1) |
申请公布日期 |
2015.06.25 |
| 申请号 |
US201414290731 |
申请日期 |
2014.05.29 |
| 申请人 |
SK hynix Inc. |
发明人 |
JEONG Rae Hyung;RYU Hyun Kyu |
| 分类号 |
H01L23/48;H01L23/00;H01L21/768;H01L25/065 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a through electrode penetrating a substrate and having a first end portion protruding from a first surface of the substrate; a passivation layer covering a sidewall of the first end portion of the through electrode and extending over the first surface of the substrate; a bump having a lower portion penetrating the passivation layer and coupled to the first end portion of the through electrode; and a lower metal layer with a concave shape disposed between the bump and the first end portion of the through electrode and covering a sidewall of the bump. |
| 地址 |
Icheon-si KR |
