| 摘要 |
<p>Electrically insulative regions P, 10a from an area of an active layer of electrically conductive or semiconductive material, at least inhibit current flow. The regions have a insulative feature defining a perimeter P around said area, and forming at least one further electrically insulative feature inside said perimeter so as to divide said area into a plurality of parts. The insulative features may be grooves, trenches or channels (eg figs 2-5, 16) formed by machining , etching or ablating material from the active layer or by an embossing method (eg figures 50-52) where the active region 1 is pressed into a compressible underlying layer 2 (figs 30a-c). The figures shows a self switch diode SSD device with current restriction G. Also large insulative features may be formed of arrays of lines (type A) or a mesh like structures (type B) (figs 17-19, 23-25) these features being suited to nano-embossing technique as the provide a more reliable conductive barrier over the area.</p> |
