| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a field effect transistor applicable to a logic circuit which operates with low power consumption. <P>SOLUTION: An n-channel or p-channel field effect transistor is characterized in that it has a barrier between a source electrode and a conduction band or a valence band of a semiconductor on which the source electrode abuts, and has such a configuration that electrons or holes which flow through the barrier from the source electrode can be adjusted by a gate voltage. <P>COPYRIGHT: (C)2012,JPO&INPIT</p> |
