| 摘要 |
<p>A field effect transistor includes: a stacked body (11); a finger source electrode (18); a finger drain electrode (20); a finger gate electrode (22); an insulating layer (24); and a source field plate (28). The finger drain electrode (20) is provided on parallel to the finger source electrode (18). The finger gate electrode (22) has a first side surface (22a) on the finger source electrode side, a second side surface (22b) on the finger drain electrode side, and an upper surface (22c), and is provided in parallel to the finger source electrode (18). The insulating layer (24) covers the surface (11a) of the stacked body (11) and the finger gate electrode (22). The source field plate (28) includes a bottom part (28a), an upper part (28b) and a connection part (28c). Length of the upper part (28b) is larger than length of the bottom part (28a) in a cross section perpendicular to the finger gate electrode (22).</p> |
