Semiconductor light emitting device and semiconductor wafer

摘要

According to one embodiment, a semiconductor light emitting device includes a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more. Tensile strain is applied to the first semiconductor layer. An edge dislocation density of the first semiconductor layer is 5×109/cm2 or less. A lattice mismatch factor between the first semiconductor layer and the light emitting layer is 0.11 percent or less.

主权项

1. A semiconductor light emitting device comprising:
a first semiconductor layer of a first conductivity type; a second semiconductor layer of a second conductivity type; and a light emitting layer provided between the first semiconductor layer and the second semiconductor layer and configured to emit a light having a peak wavelength of 440 nanometers or more, tensile strain in a direction perpendicular to a direction from the first semiconductor layer toward the second semiconductor layer being applied to the first semiconductor layer, an edge dislocation density of the first semiconductor layer being 5×109/cm2 or less, the edge dislocation density being obtained from a rocking curve half width of a symmetry plane and an asymmetry plane of the first semiconductor layer in X-ray diffraction measurement, and a lattice mismatch factor between the first semiconductor layer and the light emitting layer being 0.11 percent or less.