Compound semiconductor device on virtual substrate

摘要

A method of fabrication of barrier diode based infrared detectors, utilizing the growth of unstrained, not relaxed III-V compound semiconductor material layers having a lattice constant over 6 Angstrom, is provided. The growth is performed by the means of Molecular Beam Epitaxy (MBE) or Metal-Organic Vapor Phase Epitaxy (MOVPE). The method comprises the use of bulk crystalline substrates and the growth of a transitional layer of GaInAsSb with graded composition, followed by an optional thick layer of GaInAsSb of constant composition, lattice matched to the said III-V compound semiconductor material layers, the said optional layer of GaInAsSb of constant composition serving as a virtual substrate. The method provides high crystalline quality layers suitable for semiconductor device fabrication that can effectively interact with electromagnetic radiation of the mid-infrared spectral range with a wavelength between about 2 micrometers to about 16 micrometers.

主权项

1. A semiconductor device comprising:
(a) a bulk single crystal substrate; (b) an active region comprising at least one layer of InAsSb material; (c) a buffer layer sandwiched between the said substrate and the said active region, further comprising:
i. a transitional layer with graded composition, andii. an unstrained, un-relaxed layer of GaInSb material of a fixed composition with lattice constant between 6.1 and 6.5 Angstrom immediately adjacent to the said active region;whereas the said active region is lattice matched to the said layer of GaInSb material.