发明名称 |
Pixel structure and fabricating method thereof |
摘要 |
The pixel structure includes a scan line, a data line, a thin-film transistor, a first electrode layer, a protective layer and a second electrode layer. The thin-film transistor is electrically connected to the scan line and the data line, and includes a gate, an oxide semiconductor layer, an insulating layer, a source and a drain. The first electrode layer is in the same layer as the oxide semiconductor layer, and is surrounded by the scan line and the data line. The second electrode layer is located on the first electrode layer, and the protective layer is located between the first electrode layer and the second electrode layer, wherein one of the first and second electrode layers is electrically connected to the thin-film transistor, and the other is connected to a common voltage. The second electrode layer includes a plurality of slits exposing an area of the first electrode layer. |
申请公布号 |
US9064978(B2) |
申请公布日期 |
2015.06.23 |
申请号 |
US201314084628 |
申请日期 |
2013.11.20 |
申请人 |
HannStar Display Corporation |
发明人 |
Hu Hsien-Tang;Chao Chang-Ming;Kang Mu-Kai;Lai Jui-Chi |
分类号 |
H01L33/00;H01L29/66;H01L29/786 |
主分类号 |
H01L33/00 |
代理机构 |
Jianq Chyun IP Office |
代理人 |
Jianq Chyun IP Office |
主权项 |
1. A pixel structure characterized by comprising:
a scan line and a data line, disposed on a substrate; a thin-film transistor disposed on the substrate and electrically connected to the scan line and the data line, the thin-film transistor comprising:
a gate disposed on the substrate;an oxide semiconductor layer disposed on the gate;an insulating layer covering a channel region of the oxide semiconductor layer; anda source and a drain, disposed on the insulating layer and respectively electrically connected to the oxide semiconductor layer; a first electrode layer in the same layer as the oxide semiconductor layer, surrounded by the scan line and the data line; a protective layer covering the source, the drain, the oxide semiconductor layer, the first electrode layer and the substrate; and a second electrode layer disposed on the first electrode layer, the protective layer being located between the first electrode layer and the second electrode layer, wherein one of the first and second electrode layers is electrically connected to the thin-film transistor, and the other is connected to a common voltage, and wherein the second electrode layer comprises a plurality of slits exposing an area of the first electrode layer. |
地址 |
Taipei TW |