Decoupling capacitor for FinFET compatible process

摘要

A decoupling capacitor formed from a fin field-effect transistor (FinFET) and method of using the same are provided. An embodiment decoupling capacitor includes a fin field-effect transistor (FinFET) having a semiconductor substrate supporting a gate stack, a source, and a drain, a first terminal coupled to the semiconductor substrate and to the gate stack, the first terminal configured to couple with a first power rail, and a second terminal coupled to the source and to the drain, the second terminal configured to couple with a second power rail having a higher potential than the first power rail.

主权项

1. A device comprising:
capacitor having a semiconductor substrate supporting a fin disposed between isolation regions, the fin including a first region and a second region on opposing sides of a third region beneath a gate stack; a first terminal coupled to the semiconductor substrate and to the gate stack such that the semiconductor substrate and the gate stack have a same potential, the first terminal configured to couple with a first power rail; and a second terminal coupled to the first region and to the second region, the second terminal configured to couple with a second power rail.