发明名称 |
Semiconductor lighting module package |
摘要 |
A semiconductor lighting module package comprises a substrate, a lead frame, at least one semiconductor lighting element, and a plurality of nanoscale reflectors formed on the substrate and the lead frame for increasing reflection efficiency of the lighting module package. A pitch between every two of the plurality of nanoscale reflectors has a distance P which is shorter than a half wavelength of the visible light. Moreover, a gap between every two of the plurality of the nanoscale reflectors has a depth H, and a ratio of the depth H over the distance P is not less than 2. The distance P is between 90 nm and 130 nm. Furthermore, the light generated by the semiconductor lighting element has at least a part which is reflected by the nanoscale reflectors. |
申请公布号 |
US9065020(B2) |
申请公布日期 |
2015.06.23 |
申请号 |
US201012891815 |
申请日期 |
2010.09.28 |
申请人 |
ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. |
发明人 |
Chien Ko-Wei |
分类号 |
H01L33/00;H01L33/46 |
主分类号 |
H01L33/00 |
代理机构 |
Novak Druce Connolly Bove + Quigg LLP |
代理人 |
Novak Druce Connolly Bove + Quigg LLP |
主权项 |
1. A semiconductor lighting module package, comprising:
a substrate including a first surface and a second surface; a lead frame arranged on the first surface of the substrate with a carrier portion, a first connecting portion, and a second connecting portion, the carrier portion, the first connecting portion and the second connecting portion electrically insulated from each other; a first semiconductor lighting element and a second semiconductor lighting element arranged on the carrier portion and electrically connected to the first connecting portion and the second connecting portion separately; and a plurality of first nanoscale reflectors arranged on the first surface of the substrate, and a plurality of second nanoscale reflectors arranged on the carrier portion of the lead frame, a plurality of third nanoscale reflectors arranged on the first connecting portion of the lead frame, and a plurality of fourth nanoscale reflectors arranged on the second connecting portion of the lead frame; wherein shapes of the plurality of the fourth nanoscale reflectors are different from shapes of the plurality of the first, second and the third nanoscale reflectors; wherein a pitch between every two of the plurality of nanoscale reflectors has a distance which is less than a half wavelength of a visible light; wherein the distance is between 90 nm and 130 nm; and wherein a gap between the every two of the plurality of nanoscale reflectors has a depth, and a ratio of the depth over the distance is not less than 2. |
地址 |
Hsinchu Hsien TW |