发明名称 Semiconductor lighting module package
摘要 A semiconductor lighting module package comprises a substrate, a lead frame, at least one semiconductor lighting element, and a plurality of nanoscale reflectors formed on the substrate and the lead frame for increasing reflection efficiency of the lighting module package. A pitch between every two of the plurality of nanoscale reflectors has a distance P which is shorter than a half wavelength of the visible light. Moreover, a gap between every two of the plurality of the nanoscale reflectors has a depth H, and a ratio of the depth H over the distance P is not less than 2. The distance P is between 90 nm and 130 nm. Furthermore, the light generated by the semiconductor lighting element has at least a part which is reflected by the nanoscale reflectors.
申请公布号 US9065020(B2) 申请公布日期 2015.06.23
申请号 US201012891815 申请日期 2010.09.28
申请人 ADVANCED OPTOELECTRONIC TECHNOLOGY, INC. 发明人 Chien Ko-Wei
分类号 H01L33/00;H01L33/46 主分类号 H01L33/00
代理机构 Novak Druce Connolly Bove + Quigg LLP 代理人 Novak Druce Connolly Bove + Quigg LLP
主权项 1. A semiconductor lighting module package, comprising: a substrate including a first surface and a second surface; a lead frame arranged on the first surface of the substrate with a carrier portion, a first connecting portion, and a second connecting portion, the carrier portion, the first connecting portion and the second connecting portion electrically insulated from each other; a first semiconductor lighting element and a second semiconductor lighting element arranged on the carrier portion and electrically connected to the first connecting portion and the second connecting portion separately; and a plurality of first nanoscale reflectors arranged on the first surface of the substrate, and a plurality of second nanoscale reflectors arranged on the carrier portion of the lead frame, a plurality of third nanoscale reflectors arranged on the first connecting portion of the lead frame, and a plurality of fourth nanoscale reflectors arranged on the second connecting portion of the lead frame; wherein shapes of the plurality of the fourth nanoscale reflectors are different from shapes of the plurality of the first, second and the third nanoscale reflectors; wherein a pitch between every two of the plurality of nanoscale reflectors has a distance which is less than a half wavelength of a visible light; wherein the distance is between 90 nm and 130 nm; and wherein a gap between the every two of the plurality of nanoscale reflectors has a depth, and a ratio of the depth over the distance is not less than 2.
地址 Hsinchu Hsien TW