Semiconductor device and manufacturing method thereof

摘要

A semiconductor device includes a substrate, and a gate electrode formed on the substrate on a gate insulation film. The semiconductor device also includes a source diffusion layer and a drain diffusion layer which are formed on the substrate where the gate electrode is sandwiched between the source diffusion layer and the drain diffusion layer, one or more source contacts formed on the source diffusion layer; and one or more drain contacts formed on the drain diffusion layer. At least one of the source contacts and the drain contacts includes a first contact region having a first size and a second contact region having a second size larger than the first size on the same source diffusion layer or on the same drain diffusion layer.

主权项

1. A manufacturing method of a semiconductor device, comprising:
preparing design data for manufacturing a semiconductor device which comprises a first contact region having a first size; preparing a photo mask based on the design data, wherein N (N being an integer of 2 or more) first contact regions are replaced with one second contact region having a second size greater than the first size; and forming a semiconductor device having the first contact region and the second contact region formed on at least one of a common source diffusion layer and a common drain diffusion layer using the photo mask.