| 发明名称 | Nonvolatile memory device having adjustable program pulse width | ||
| 摘要 | A method of programming a nonvolatile memory device comprises determining a temperature condition of the nonvolatile memory device, determining a program pulse period according to the temperature condition, supplying a program voltage to a selected word line using the program pulse period, and supplying a pass voltage to unselected word lines while supplying the program voltage to the selected word line. | ||
| 申请公布号 | US9064545(B2) | 申请公布日期 | 2015.06.23 |
| 申请号 | US201213721859 | 申请日期 | 2012.12.20 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Cho Yongsung;Choi Kihwan;Park Il Han;Song Kiwhan;Yoon Sangyong |
| 分类号 | G11C16/04;G11C7/04;G11C16/10 | 主分类号 | G11C16/04 |
| 代理机构 | Volentine & Whitt, PLLC | 代理人 | Volentine & Whitt, PLLC |
| 主权项 | 1. A method of programming a nonvolatile memory device, comprising: determining a temperature condition of the nonvolatile memory device; determining a program pulse period according to the temperature condition; supplying a program voltage to a selected word line using the program pulse period; and supplying a pass voltage to unselected word lines while supplying the program voltage to the selected word line. | ||
| 地址 | Suwon-si, Gyeonggi-do KR | ||