Semiconductor device including graphene layer and method of making the semiconductor device

摘要

A semiconductor device includes a substrate, first plural contacts formed in the substrate, a graphene layer formed on the substrate and on the first plural contacts and second plural contacts formed on the graphene layer such that the graphene layer is formed between the first plural contacts and the second plural contacts.

主权项

1. A semiconductor device, comprising:
a semiconductor substrate; a dielectric layer formed in the semiconductor substrate; first plural contacts formed in the dielectric layer such that the dielectric layer comprises:
a first portion which is formed between the first plural contacts; anda second portion which is formed between the semiconductor substrate and the first plural contacts; a graphene layer formed on an upper surface of the first portion of the dielectric layer and on an upper surface of the first plural contacts; and second plural contacts formed on the graphene layer such that the graphene layer is formed between the first plural contacts and the second plural contacts, wherein an area of contact of the first plural contacts is substantially the same as an area of contact of the second plural contacts, and the first plural contacts are substantially aligned with the second plural contacts to form a double-contact configuration, and wherein the upper surface of the first plural contacts is substantially co-planar with the upper surface of the first portion of the dielectric layer, such that the graphene layer comprises an undistorted graphene layer.