发明名称 Enable/disable of memory chunks during memory access
摘要 Chunks of memory cells in a memory array are enabled to be accessed and then one or more of the chunks are disabled from being accessed. In one such apparatus, an array includes chunks of memory cells and a chunk selector circuit coupled to each chunk to enable the memory cells in the respective chunk to be accessed.
申请公布号 US9064578(B2) 申请公布日期 2015.06.23
申请号 US201213718801 申请日期 2012.12.18
申请人 Micron Technology, Inc. 发明人 Tanzawa Toru;Tamada Satoru;Kawai Koichi;Manabe Tetsuji
分类号 G11C16/08;G11C16/04;G11C16/06;G11C7/18 主分类号 G11C16/08
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. A method comprising: enabling a first chunk of memory cells and a second chunk of memory cells in a block of memory cells to be programmed; applying a first programming pulse to the memory cells in the first chunk and the second chunk; disabling the first chunk of memory cells from being programmed when the memory cells in the first chunk are programmed; and applying a second programming pulse to the memory cells in the second chunk.
地址 Boise ID US