Methods and structure for carrier-less thin wafer handling

摘要

Methods of forming a microelectronic assembly and the resulting structures and devices are disclosed herein. In one embodiment, a method of forming a microelectronic assembly includes removing material exposed at portions of a surface of a substrate to form a processed substrate having a plurality of thinned portions separated by integral supporting portions of the processed substrate having a thickness greater than a thickness of the thinned portions, at least some of the thinned portions including a plurality of electrically conductive interconnects extending in a direction of the thicknesses of the thinned portions and exposed at the surface; and removing the supporting portions of the substrate to sever the substrate into a plurality of individual thinned portions, at least some individual thinned portions including the interconnects.

主权项

1. A method of forming a microelectronic assembly, comprising:
removing material exposed at portions of a surface of a substrate to form a processed substrate having a plurality of thinned portions separated by integral supporting portions of the processed substrate, each of the integral supporting portions having a width and a first thickness extending along the entire width, wherein the first thickness is greater than a thickness of the thinned portions, at least some of the thinned portions each including a plurality of electrically conductive interconnects extending in a direction of the thicknesses of the thinned portions and exposed at the surface; and removing fully the integral supporting portions of the substrate to sever the substrate into a plurality of individual thinned portions, each individual thinned portion having a thickness less than the first thickness, at least some individual thinned portions including the interconnects.