Graphene switching device having tunable barrier

摘要

According to example embodiments, a graphene switching devices has a tunable barrier. The graphene switching device may include a gate substrate, a gate dielectric on the gate substrate, a graphene layer on the gate dielectric, a semiconductor layer and a first electrode sequentially stacked on a first region of the graphene layer, and a second electrode on a second region of the graphene layer. The semiconductor layer may be doped with one of an n-type impurity and a p-type impurity. The semiconductor layer may face the gate substrate with the graphene layer being between the semiconductor layer and the gate substrate. The second region of the graphene layer may be separated from the first region on the graphene layer.

主权项

1. A graphene switching device having a tunable barrier, comprising:
a semiconductor layer configured to form an energy gap between a graphene layer and a first electrode,
the first electrode being on a first region of the semiconductor layer,the graphene layer being on the semiconductor layer, the graphene layer having a zero band gap; an insulating layer on a second region of the semiconductor layer,
the insulating layer being separated from the first electrode,the graphene layer being between the first electrode and the insulating layer,the graphene layer extending onto the insulating layer; a second electrode on the graphene layer and the second region of the semiconductor layer,
the second electrode facing the insulating layer; a gate dielectric on the graphene layer; and a gate electrode on the gate dielectric.