发明名称 Substrate processing based on resistivity measurements
摘要 The resistivity of a silicon boule may vary along its length, thereby making a uniform ion implantation process sub-optimal. A system and method for measuring a resistivity of a substrate, and processing the substrate based on that measured resistivity is disclosed. The system includes a resistivity measurement system, a controller and an ion implanting system, where the controller configures the ion implantation process based on the measured resistivity of the substrate.
申请公布号 US9064760(B2) 申请公布日期 2015.06.23
申请号 US201313897698 申请日期 2013.05.20
申请人 Varian Semiconductor Equipment Associates, Inc. 发明人 Bateman Nicholas P. T.;Sullivan Paul
分类号 G01R31/26;H01L21/66 主分类号 G01R31/26
代理机构 代理人
主权项 1. A method of processing substrates, comprising: measuring a resistivity of a first substrate; and processing a second substrate based on said measured resistivity to achieve a desired sheet resistance, wherein said first substrate and said second substrate are the same substrate, and wherein said processing comprises implanting ions into said second substrate and subsequently subjecting said second substrate to a second processing step, wherein said second processing step is varied based on said measured resistivity.
地址 Gloucester MA US