| 摘要 |
<p>The present invention relates to a method of etching self-aligned contact/via features in a low-k dielectric layer disposed below a hardmask, which is disposed below a planarization layer. At least one cycle is provided, where each cycle comprises thinning the planarization layer; forming a deposition layer on the hardmask and planarization layer; and etching the low-k dielectric layer masked by the deposition layer.</p> |
