| 摘要 |
PROBLEM TO BE SOLVED: To increase a read margin of a resistance change type memory cell. ! SOLUTION: A semiconductor device is provided that includes: a first resistance change type memory cell that is written to a first and second resistance states by the application of first and second currents having mutually different directions and stores first and second information respectively in the first and second resistance state; a second resistance change type memory cell that is written to third and fourth states by the application of third and fourth currents having mutually different directions and stores the first and second information respectively in the third and fourth resistance states; a first reading circuit that reads information stored in the first resistance change type memory cell on the basis of a first adjustment resistance; and a second reading circuit that reads information stored in the second resistance change type memory cell on the basis of a second adjustment resistance. The first adj |
