发明名称 ELECTROSTATIC PROTECTION CIRCUIT AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To provide an electrostatic protection circuit with a simple circuit configuration, which can exhibit a sufficient protection characteristic against electrostatic discharge without causing an erroneous operation in normal operation.SOLUTION: An electrostatic protection circuit comprises: a series circuit connected between a first node and a second node, and having a first impedance element and a clamp element connected to each other at a third node; a first transistor connected between the first node and a fourth node, and turning ON according to the rise of the voltage generated in the impedance element; a second impedance element connected between the fourth node and the second node; a second transistor turning ON according to the rise of the voltage generated in the second impedance element and increasing current flowing in the first impedance element; and a discharge circuit flowing the current from the first node to the second node when the second transistor is in the ON state.</p>
申请公布号 JP2015115339(A) 申请公布日期 2015.06.22
申请号 JP20130253931 申请日期 2013.12.09
申请人 SEIKO EPSON CORP 发明人 IKEDA MASUHIDE
分类号 H01L21/822;H01L27/04 主分类号 H01L21/822
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