发明名称 |
PZT-BASED FERROELECTRIC THIN FILM-FORMING COMPOSITION, METHOD OF PREPARING THE SAME, AND METHOD OF FORMING PZT-BASED FERROELECTRIC THIN FILM USING THE SAME |
摘要 |
This PZT-based ferroelectric thin film-forming composition comprises: a PZT precursor; a diol; one of polyvinyl pyrrolidones and a polyethylene glycol; water; and a linear monoalcohol having 6 to 12 carbon chains. In this composition, a concentration of the PZT precursor in 100 wt% of the composition is 17 wt% to 35 wt% in terms of S 10 oxides, the ratio of the diol to 100 wt% of the composition is 16 wt% to 56 wt%, the ratio of the one of the polyvinyl pyrrolidones and the polyethylene glycol to 1 mol of the PZT precursor is 0.01 mol to 0.25 mol, the ratio of the water to I mol of the PZT precursor is 0.5 mol to 3 mol, and the ratio of the linear monoalcohol to 100 wt% of the composition is 0.6 wt% to lOwt%. FIG. 1 |
申请公布号 |
IN469DE2014(A) |
申请公布日期 |
2015.06.19 |
申请号 |
IN2014DEL469 |
申请日期 |
2014.02.18 |
申请人 |
MITSUBISHI MATERIALS CORPORATION |
发明人 |
DOI, TOSHIHIRO;SAKURAI, HIDEAKI;SOYAMA, NOBUYUKI |
分类号 |
B05D3/02 |
主分类号 |
B05D3/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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