发明名称 PZT-BASED FERROELECTRIC THIN FILM-FORMING COMPOSITION, METHOD OF PREPARING THE SAME, AND METHOD OF FORMING PZT-BASED FERROELECTRIC THIN FILM USING THE SAME
摘要 This PZT-based ferroelectric thin film-forming composition comprises: a PZT precursor; a diol; one of polyvinyl pyrrolidones and a polyethylene glycol; water; and a linear monoalcohol having 6 to 12 carbon chains. In this composition, a concentration of the PZT precursor in 100 wt% of the composition is 17 wt% to 35 wt% in terms of S 10 oxides, the ratio of the diol to 100 wt% of the composition is 16 wt% to 56 wt%, the ratio of the one of the polyvinyl pyrrolidones and the polyethylene glycol to 1 mol of the PZT precursor is 0.01 mol to 0.25 mol, the ratio of the water to I mol of the PZT precursor is 0.5 mol to 3 mol, and the ratio of the linear monoalcohol to 100 wt% of the composition is 0.6 wt% to lOwt%. FIG. 1
申请公布号 IN469DE2014(A) 申请公布日期 2015.06.19
申请号 IN2014DEL469 申请日期 2014.02.18
申请人 MITSUBISHI MATERIALS CORPORATION 发明人 DOI, TOSHIHIRO;SAKURAI, HIDEAKI;SOYAMA, NOBUYUKI
分类号 B05D3/02 主分类号 B05D3/02
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