| 摘要 |
<p>The present invention relates to a chemical mechanical apparatus. When the polishing surface of a wafer is fixed to a substrate chuck to face an upper side instead of a lower side, a cylindrical polishing pad rotates around a center axis and line-touches the polishing surface of the wafer to be polished by friction. A chemical polishing process for the wafer can be performed in a narrow space even through the diameter of the wafer is large. Division chambers are formed in the cylindrical polishing pad while the wafer is rotated. Thereby, the pressure of the division chamber can be independently controlled. Different pressure is applied to the polishing surface of the wafer line-touching the cylindrical polishing pad in order to polish the regions of the polishing surface. Thereby, the polishing quality of the entire wafer can be maintained by applying different polishing conditions to the regions of the wafer.</p> |
