| 摘要 |
This imaging element is provided with a light-receiving element (20) and a laminate structure (130) which is arranged on the light incidence side of the light-receiving element (20) and comprises, from the side of the light-receiving element, a semiconductor layer (131) and a nanocarbon film (132) to which a prescribed potential is applied. The semiconductor layer (131) comprises a wide-gap semiconductor in which the electron affinity is greater than or equal to 3.5eV, or, comprises a semiconductor having a band gap of 2.0 eV or greater and an electron affinity of 3.5eV or greater. |
