| 发明名称 |
POLYMER ON GRAPHENE |
| 摘要 |
A top-gated graphene field effect transistor can be fabricated by forming a layer of graphene on a substrate, and applying an electrochemical deposition process to deposit a layer of dielectric polymer on the graphene layer. An electric potential between the graphene layer and a reference electrode is cycled between a lower potential and a higher potential. A top gate is formed above the polymer. |
| 申请公布号 |
US2015170906(A1) |
申请公布日期 |
2015.06.18 |
| 申请号 |
US201414554000 |
申请日期 |
2014.11.25 |
| 申请人 |
NUtech Ventures |
发明人 |
Redepenning Jody G.;Sinitskii Alexander;Wymore Benjamin |
| 分类号 |
H01L21/02;H01L29/786;H01L29/51;H01L29/24;H01L29/66;H01L29/16 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of fabricating a graphene transistor, the method comprising:
forming a layer of graphene on a substrate; applying an electrochemical deposition process to deposit a layer of dielectric polymer on the graphene layer; and forming a top gate above the polymer. |
| 地址 |
Lincoln NE US |
