| 主权项 |
1. A semiconductor device comprising a substrate and a thin-film transistor, a gate line layer and a source line layer which are supported by the substrate,
wherein the gate line layer includes a gate line and the thin-film transistor's gate electrode, the source line layer includes a source line and the thin-film transistor's source and drain electrodes, the thin-film transistor includes the gate electrode, a gate insulating layer formed over the gate electrode, a semiconductor layer stacked on the gate insulating layer, and the source and drain electrodes, the semiconductor device further includes: an interlevel insulating layer which is formed over the source and drain electrodes and which includes a first insulating layer that contacts at least with the surface of the drain electrode; a first transparent conductive layer which is formed on the interlevel insulating layer and which has a first hole; a dielectric layer which is formed on the first transparent conductive layer and which covers a side surface of the first hole of the first transparent conductive layer; and a second transparent conductive layer formed over the dielectric layer so as to overlap with at least a portion of the first transparent conductive layer with the dielectric layer interposed between them, and wherein the dielectric layer has a second hole and the first insulating layer has a third hole, the interlevel insulating layer and the dielectric layer have a first contact hole, the sidewall of which includes respective side surfaces of the second and third holes, at least a portion of the side surface of the third hole being aligned with the side surface of the second hole, the second transparent conductive layer contacts with the drain electrode inside the first contact hole, thereby forming a contact portion where the second transparent conductive layer and the drain electrode contact with each other, and when viewed along a normal to the substrate, at least a part of the contact portion overlaps with the gate line layer. |
