发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A semiconductor device having a transistor including an oxide semiconductor film is disclosed. In the semiconductor device, the oxide semiconductor film is provided along a trench formed in an insulating layer. The trench includes a lower end corner portion and an upper end corner portion having a curved shape with a curvature radius of longer than or equal to 20 nm and shorter than or equal to 60 nm, and the oxide semiconductor film is provided in contact with a bottom surface, the lower end corner portion, the upper end corner portion, and an inner wall surface of the trench. The oxide semiconductor film includes a crystal having a c-axis substantially perpendicular to a surface at least over the upper end corner portion. |
申请公布号 |
US2015171195(A1) |
申请公布日期 |
2015.06.18 |
申请号 |
US201414576400 |
申请日期 |
2014.12.19 |
申请人 |
Semiconductor Energy Laboratory Co., Ltd. |
发明人 |
ISOBE Atsuo;SASAKI Toshinari;SASAGAWA Shinya;ISHIZUKA Akihiro |
分类号 |
H01L29/66;H01L21/477;H01L29/24;H01L21/02;H01L29/786;H01L29/04 |
主分类号 |
H01L29/66 |
代理机构 |
|
代理人 |
|
主权项 |
1. (canceled) |
地址 |
Atsugi-shi JP |