发明名称 |
METHOD FOR ADJUSTING FIN WIDTH IN INTEGRATED CIRCUITRY |
摘要 |
A method includes growing a plurality of parallel mandrels on a surface of a semiconductor substrate, each mandrel having at least two laterally opposite sidewalls and a predetermined width. The method further includes forming a first type of spacers on the sidewalls of the mandrels, wherein the first type of spacers between two adjacent mandrels are separated by a gap. The predetermined mandrel width is adjusted to close the gap between the adjacent first type of spacers to form a second type of spacers. The mandrels are removed to form a first type of fins from the first type of spacers, and to form a second type of fins from spacers between two adjacent mandrels. The second type of fins are wider than the first type of fins. |
申请公布号 |
US2015171083(A1) |
申请公布日期 |
2015.06.18 |
申请号 |
US201314104744 |
申请日期 |
2013.12.12 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
Wang Chien-Hsun;Chang Chih-Sheng;Lin Yi-Tang |
分类号 |
H01L27/088;H01L29/10 |
主分类号 |
H01L27/088 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Hsin-Chu TW |