Electronic Device Including a Vertical Conductive Structure

摘要

An electronic device can include a buried conductive region and a semiconductor layer over the buried conductive region. The electronic device can further include a horizontally-oriented doped region and a vertical conductive region, wherein the vertical conductive region is electrically connected to the horizontally-oriented doped region and the buried conductive region. The electronic device can still further include an insulating layer overlying the horizontally-oriented doped region, and a first conductive electrode overlying the insulating layer and the horizontally-oriented doped region, wherein a portion of the vertical conductive region does not underlie the first conductive electrode. The electronic device can include a Schottky contact that allows for a Schottky diode to be connected in parallel with a transistor. Processes of forming an electronic device allow a vertical conductive region to be formed after a conductive electrode, a gate electrode, a source region, or both.

主权项

1. An electronic device comprising:
a buried conductive region; a semiconductor layer having a primary surface and an opposing surface, wherein the buried conductive region is disposed closer to the opposing surface than to the primary surface; a horizontally-oriented doped region adjacent to the primary surface; a first vertical conductive region adjacent to the primary surface and extending though the semiconductor layer toward the buried conductive region, wherein the first vertical conductive region is electrically connected to the horizontally-oriented doped region and the buried conductive region; a first insulating layer overlying the horizontally oriented doped region and the first vertical conductive region; and a conductive electrode overlying the first insulating layer and the horizontally-oriented doped region, wherein a portion of the first vertical conductive region does not underlie the conductive electrode.