发明名称 FABRICATION METHODS FOR MONOLITHICALLY ISLED BACK CONTACT BACK JUNCTION SOLAR CELLS
摘要 According to one aspect of the disclosed subject matter, a method for forming a monolithically isled back contact back junction solar cell using bulk wafers is provided.
申请公布号 US2015171240(A1) 申请公布日期 2015.06.18
申请号 US201414493341 申请日期 2014.09.22
申请人 Solexel, Inc. 发明人 Kapur Pawan;Deshpande Anand;Rana Virendra V.;Moslehi Mehrdad M.;Seutter Sean M.
分类号 H01L31/0224;H01L31/0216;H01L31/18 主分类号 H01L31/0224
代理机构 代理人
主权项 1. A method for forming a back contact back junction solar cell, comprising: depositing at least a base dopant source and an emitter dopant source on the back surface of a solar cell substrate; annealing said solar cell substrate forming doped emitter regions corresponding to said emitter dopant source and doped base regions corresponding to said base dopant source; etching said base dopant source and said emitter dopant source;depositing a backside passivation layer on said back surface of said solar cell; opening contacts to said doped emitter regions and said doped base regions through said backside passivation layer; and forming patterned base metallization and patterned emitter metallization on said back surface of said solar cell with electrical interconnections to said contacts to said base regions and said emitter regions.
地址 Milpitas CA US