发明名称 |
METHODS OF FORMING METAL ON INHOMOGENEOUS SURFACES AND STRUCTURES INCORPORATING METAL ON INHOMOGENEOUS SURFACES |
摘要 |
<p>The disclosed technology relates to integrate circuits, including memory devices. A method of forming an integrated circuit comprises providing a surface comprising a first region and a second region, wherein the first region is formed of a different material than the second region. The method additionally comprises forming a seeding material in contact with and across the first and second regions. The method further comprises forming a metal comprising tungsten on the seeding material.</p> |
申请公布号 |
WO2015088921(A1) |
申请公布日期 |
2015.06.18 |
申请号 |
WO2014US68916 |
申请日期 |
2014.12.05 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
CHAN, TSZ, WAH;HU, YONGJUN, J.;LENGADE, SWAPNIL |
分类号 |
H01L21/28;H01L21/203;H01L21/205 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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