发明名称 ORGANIC MOLECULAR MEMORY
摘要 PROBLEM TO BE SOLVED: To provide an organic molecular memory having stable operation and high reliability by controlling a current flowing through a memory cell.SOLUTION: An organic molecular memory of an embodiment includes: a first electrode; a second electrode formed of a material different from that of the first electrode; and an organic molecular layer which is disposed between the first electrode and the second electrode, and in which one end of a variable resistance molecular chain constituting the organic molecular layer is chemically bonded to the first electrode, and a gap exists between the other end of the variable resistance molecular chain and the second electrode. When the one end of the variable resistance molecular chain is a thiol group, a region chemically bonded to one end of the first electrode is gold (Au), silver (Ag), copper (Cu), tungsten (W), tungsten nitride (WN), tantalum nitride (TaN) or titanium nitride (TiN), and a planar region facing the other end of the second electrode is tantalum (Ta), molybdenum (Mo), molybdenum nitride (MoN), or silicon (Si).
申请公布号 JP2015111737(A) 申请公布日期 2015.06.18
申请号 JP20150045340 申请日期 2015.03.06
申请人 TOSHIBA CORP 发明人 HAYASHI TETSUYA;NISHIZAWA HIDEYUKI
分类号 H01L27/28;C07F1/12;H01L27/105;H01L45/00;H01L49/00;H01L51/05;H01L51/30 主分类号 H01L27/28
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