发明名称 ACTIVE MATRIX SUBSTRATE, LIQUID CRYSTAL DISPLAY DEVICE, AND METHOD FOR MANUFACTURING ACTIVE MATRIX SUBSTRATE
摘要 An active matrix substrate (100A) includes a TFT (20), a scanning line (11) substantially parallel to a first direction, a signal line (12) substantially parallel to a second direction which is orthogonal to the first direction, a first interlayer insulating layer (16) covering the TFT, a lower layer electrode (17) provided on the first interlayer insulating layer, a dielectric layer (18) provided on the lower layer electrode, and an upper layer electrode (19) overlapping at least a portion of the lower layer electrode via the dielectric layer. A first contact hole (31) includes a first aperture (16a) formed in the first interlayer insulating layer and a second aperture (18a) formed in the dielectric layer. A width of the first aperture along one of the first direction and the second direction is smaller than a width of the second aperture along the one direction. A portion of the contour of the second aperture is located inside the contour of the first aperture, and the contour of the second aperture is not rectangular. The area of the portion of the second aperture not overlapping the first aperture is smaller than that in an imaginary case where the contour of the second aperture is rectangular.
申请公布号 US2015168759(A1) 申请公布日期 2015.06.18
申请号 US201314410592 申请日期 2013.06.18
申请人 Sharp Kabushiki Kaisha 发明人 Amano Tohru
分类号 G02F1/1368;H01L27/12;H01L29/786;G02F1/1362 主分类号 G02F1/1368
代理机构 代理人
主权项 1. An active matrix substrate comprising: a substrate; a thin film transistor being supported by the substrate and including a semiconductor layer, a gate electrode, a source electrode, and a drain electrode; a scanning line provided so as to extend substantially parallel to a first direction, and electrically connected to the gate electrode of the thin film transistor; a signal line provided so as to extend substantially parallel to a second direction orthogonal to the first direction, and electrically connected to the source electrode of the thin film transistor; a first interlayer insulating layer provided so as to cover the thin film transistor; a lower layer electrode provided on the first interlayer insulating layer; a dielectric layer provided on the lower layer electrode; and an upper layer electrode being provided on the dielectric layer and overlapping at least a portion of the lower layer electrode via the dielectric layer,wherein, a first contact hole through which a portion of the drain electrode is exposed is formed in the first interlayer insulating layer and the dielectric layer, the first contact hole allowing the upper layer electrode to be electrically connected to the drain electrode; the first contact hole includes a first aperture formed in the first interlayer insulating layer and a second aperture formed in the dielectric layer; a width of the first aperture along one of the first direction and the second direction is smaller than a width of the second aperture along the one direction; when viewed from a normal direction of the substrate, a portion of the contour of the second aperture is located inside the contour of the first aperture, and the contour of the second aperture is not rectangular; and the area of a portion of the second aperture not overlapping the first aperture is smaller than that in an imaginary case where the contour of the second aperture is a rectangle whose width along the first direction and whose width along the second direction are identical to those of the contour of the second aperture.
地址 Osaka-shi, Osaka JP