| 摘要 |
<p>This method for manufacturing a photovoltaic power apparatus includes: a first step wherein a recessed and projected structure is formed by forming recesses on one surface of a first conductivity-type or second conductivity-type crystalline semiconductor substrate; a second step wherein a first conductivity-type semiconductor film is formed on the one surface of the crystalline semiconductor substrate, said one surface including the insides of the recesses of the recessed and projected structure; a third step wherein an etching paste is applied to the insides of the recesses having the first conductivity-type semiconductor film formed therein, the surfaces of the recesses are exposed by removing, by etching, the first conductivity-type semiconductor film in the recesses, and first semiconductor bonded regions of the first conductivity-type semiconductor film and the crystalline semiconductor substrate are formed on the projections of the recessed and projected structure by leaving the first conductivity-type semiconductor film on the projections; a fourth step wherein the etching paste is removed; and a fifth step wherein second conductivity-type semiconductor films are formed in the exposed recesses, and second semiconductor bonded regions of the second conductivity-type semiconductor film and the crystalline semiconductor substrate are formed insides of the recesses.</p> |
