| 摘要 |
High performance gate drives 200, 300 and methods 500 for driving semiconductor switching elements, such as insulated gate bipolar transistors (IGBTs), are provided. The gate drive 200, 300 can control the voltage applied to the gate of the IGBT 210, 220 to one or more intermediate voltages near the threshold voltage of the IGBT 210, 220 to control dv/dt of the collector-emitter voltage during and the di/dt of the collector current turn off. For instance, a voltage level between the turn on voltage and the turn off voltage can be applied for a first time period 506 to control dv/dt of the collector-emitter voltage and di/dt of the collector current during turn off. Another voltage level between the turn on voltage and the turn off voltage can be applied for a second time period 508 during reverse recovery of a freewheeling diode 215, 225 coupled in parallel with the IGBT 210, 220. |
