| 摘要 |
In the present invention, in a semiconductor power device such as a power MOSFET having a super-junction structure in each of an active cell region and a chip peripheral region and having its upper main surface covered by a resin molded body, a ring region of the first conductivity type is provided at this surface and outside the main junction region of a second conductivity type. This ring region surrounds the active cell region along an inner end of a column circular super-junction region of the second conductivity type. In the power MOSFET comprising this super-junction structure the deterioration of the breakdown voltage charateristic due to interfacial charge is reduced. |
