| 摘要 |
Methods and systems for lateral switched-emitter thyristors in a single-layer implementation. Lateral operation is advantageously achieved by using an embedded gate. Embedded gate plugs are used to controllably invert a portion of the P-base region, so that the electron population at the portion of the inversion layer which is closest to the anode will provide a virtual emitter, and will provide sufficient gain so that the combination of bipolar devices will go into latchup. |
