| 摘要 |
<p>A seed crystal film (3) composed of a III metal nitride single crystal is formed on a substrate (1), and at that time, a non-growing surface (1b) not covered with the seed crystal film (3) is formed on the substrate (1). A single crystal (4) is grown on the seed crystal film (3) by means of a flux method. The thickness of the substrate (1) is 0.8-1.2 mm.</p> |
