ORGANIC PHOTOELECTRONIC DEVICE AND IMAGE SENSOR

摘要

The present invention relates to an organic photoelectronic device and an image sensor. The present invention includes a first electrode and a second electrode which face each other, and an active layer located between the first electrode and the second electrode. The active layer includes a p-type semiconductor compound which is represented by a following chemical formula 1, and a n-type semiconductor compound which shows a maximum absorption peak in a wavelength range of 500nm to 600nm. In the chemical formula 1, R1 to R12 are defined in a specification.